A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage583en_US
dc.citation.issueNumber5en_US
dc.citation.spage576en_US
dc.citation.volumeNumber54en_US
dc.contributor.authorNarin, P.
dc.contributor.authorKutlu-Narin, E.
dc.contributor.authorAtmaca, G.
dc.contributor.authorSarikavak-Lisesivdin, B.
dc.contributor.authorLisesivdin, S. B.
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-02-14T08:06:38Z
dc.date.available2023-02-14T08:06:38Z
dc.date.issued2022-04-08
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractMetal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/ GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 108 cm2 for Sample B with a lattice-matched In0.17Al0.83N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness. The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).en_US
dc.description.provenanceSubmitted by Evrim Ergin (eergin@bilkent.edu.tr) on 2023-02-14T08:06:38Z No. of bitstreams: 1 A_structural_analysis_of_ultrathin_barrier_InAlN_GaN_heterostructures_for_GaN_based_high-frequency_power_electronics.pdf: 4836540 bytes, checksum: 8e2c08e3df9e7736fc623bbcaf4c9147 (MD5)en
dc.description.provenanceMade available in DSpace on 2023-02-14T08:06:38Z (GMT). No. of bitstreams: 1 A_structural_analysis_of_ultrathin_barrier_InAlN_GaN_heterostructures_for_GaN_based_high-frequency_power_electronics.pdf: 4836540 bytes, checksum: 8e2c08e3df9e7736fc623bbcaf4c9147 (MD5) Previous issue date: 2022-04-08en
dc.identifier.doi10.1002/sia.7067en_US
dc.identifier.eissn1096-9918
dc.identifier.issn0142-2421
dc.identifier.urihttp://hdl.handle.net/11693/111234
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttps://doi.org/10.1002/sia.7067en_US
dc.source.titleSurface and Interface Analysisen_US
dc.subjectAFMen_US
dc.subjectGaNen_US
dc.subjectStructural propertiesen_US
dc.subjectUtrathinen_US
dc.subjectXRDen_US
dc.titleA structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronicsen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)