High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

dc.citation.epage063503-3en_US
dc.citation.issueNumber6en_US
dc.citation.spage063503-1en_US
dc.citation.volumeNumber97en_US
dc.contributor.authorYu, H. Y.en_US
dc.contributor.authorCheng, S. L.en_US
dc.contributor.authorPark, J. H.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorOnbal, M. C.en_US
dc.contributor.authorErcan, B.en_US
dc.contributor.authorNishi, Y.en_US
dc.contributor.authorSaraswat, K. C.en_US
dc.contributor.bilkentauthorOkyay, Ali Kemal
dc.date.accessioned2016-02-08T09:57:36Z
dc.date.available2016-02-08T09:57:36Z
dc.date.issued2010-08-09en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractGermanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 106 cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platformen_US
dc.identifier.doi10.1063/1.3478242en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/22256
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3478242en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectCrystal qualitiesen_US
dc.subjectDefect-freeen_US
dc.subjectElectrical characteristicen_US
dc.subjectGermanium-on-insulatoren_US
dc.subjectHeteroepitaxyen_US
dc.subjectHigh qualityen_US
dc.subjectHydrogen annealingen_US
dc.subjectLateral overgrowthen_US
dc.subjectLow defect densitiesen_US
dc.subjectMetal-oxide-semiconductor transistoren_US
dc.titleHigh quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealingen_US
dc.typeArticleen_US
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing.pdf
Size:
1.06 MB
Format:
Adobe Portable Document Format
Description:
Full printable version