AlGaN/GaN-Based laterally gated high-electron-mobility transistors with optimized linearity

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buir.contributor.authorOdabaşı, Oğuz
buir.contributor.authorYılmaz, Doğan
buir.contributor.authorAras, Erdem
buir.contributor.authorAsan, Kübra Elif
buir.contributor.authorZafar, Salahuddin
buir.contributor.authorÇankaya Akoğlu, Büşra
buir.contributor.authorBütün, Bayram
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidOdabaşı, Oğuz|0000-0002-2002-1488
buir.contributor.orcidYılmaz, Doğan|0000-0001-6102-4477
buir.contributor.orcidSalahuddin Zafar|0000-0002-5212-9602
buir.contributor.orcidÇankaya Akoğlu, Büşra|0000-0001-5680-1649
buir.contributor.orcidBütün, Bayram|0000-0003-0892-4681
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage1023en_US
dc.citation.issueNumber3en_US
dc.citation.spage1016en_US
dc.citation.volumeNumber68en_US
dc.contributor.authorOdabaşı, Oğuz
dc.contributor.authorYılmaz, Doğan
dc.contributor.authorAras, Erdem
dc.contributor.authorAsan, Kübra Elif
dc.contributor.authorZafar, Salahuddin
dc.contributor.authorÇankaya Akoğlu, Büşra
dc.contributor.authorBütün, Bayram
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2022-01-28T13:13:52Z
dc.date.available2022-01-28T13:13:52Z
dc.date.issued2021-02-01
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated devices are investigated experimentally in detail for the first time. Transistors with different gate dimensions and conventional planar devices are fabricated using two-step electron beam lithography (EBL). Current-voltage, source-access resistance, small-signal, and two-tone measurements are performed to evaluate the linearity of devices. Contrary to conventional planar HEMTs, the intrinsic transconductance of laterally gated devices monotonically increases with increasing gate voltage, showing a similar behavior as junction field-effect transistors (FETs). The source-access resistance shows a polynomial increase with the drain current, which can be reduced by decreasing the filling ratio of the buried gates. Through the optimization of these two competing factors, i.e., intrinsic transconductance and the source-access resistance, flat transconductance with high linearity is achieved experimentally. The laterally gated structure shows flat transconductance and small-signal power gain over a larger span of gate voltage that is 2.5 times higher than a planar device. Moreover, 6.9-dB improvement in output intercept point (OIP3)/P DC is achieved. This approach can be used to improve the linearity of AlGaN/GaN HEMTs at the device level.en_US
dc.description.provenanceSubmitted by Evrim Ergin (eergin@bilkent.edu.tr) on 2022-01-28T13:13:52Z No. of bitstreams: 1 AlGaNGaN-Based_laterally_gated_high-electron-mobility_transistors_with_optimized_linearity.pdf: 1847332 bytes, checksum: 4785ade99fb6bece1118dea1ddd49e00 (MD5)en
dc.description.provenanceMade available in DSpace on 2022-01-28T13:13:52Z (GMT). No. of bitstreams: 1 AlGaNGaN-Based_laterally_gated_high-electron-mobility_transistors_with_optimized_linearity.pdf: 1847332 bytes, checksum: 4785ade99fb6bece1118dea1ddd49e00 (MD5) Previous issue date: 2021-02-01en
dc.identifier.doi10.1109/TED.2021.3053221en_US
dc.identifier.eissn1557-9646
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/11693/76885
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://doi.org/10.1109/TED.2021.3053221en_US
dc.source.titleIEEE Transactions on Electron Devicesen_US
dc.subjectAlGaN/GaN high-electron-mobility transistors (HEMTs)en_US
dc.subjectBuried gateen_US
dc.subjectField-effect transistors (FETs)en_US
dc.subjectFinFETen_US
dc.subjectFinHEMTen_US
dc.subjectLaterally gated HEMTen_US
dc.subjectLinearityen_US
dc.subjectTransconductanceen_US
dc.subjectTri-gateen_US
dc.titleAlGaN/GaN-Based laterally gated high-electron-mobility transistors with optimized linearityen_US
dc.typeArticleen_US

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