Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage161113en_US
dc.citation.issueNumber16en_US
dc.citation.spage161113en_US
dc.citation.volumeNumber104en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorZhang Z.-H.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorJu, Z. G.en_US
dc.contributor.authorZhang, X. L.en_US
dc.contributor.authorJi Y.en_US
dc.contributor.authorHasanov N.en_US
dc.contributor.authorZhu B.en_US
dc.contributor.authorLu S.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorTeng, J. H.en_US
dc.contributor.authorWei, S. X.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:03:15Z
dc.date.available2015-07-28T12:03:15Z
dc.date.issued2014-04-24en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractA three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was investigated both experimentally and theoretically. In the proposed structure, the electron leakage is found to be effectively reduced, while the hole injection efficiency is simultaneously increased significantly, hence enabling a greatly enhanced radiative recombination rate within the active region. As a result, improvements of 12.25% in the optical output power and 11.98% in the external quantum efficiency are obtained from the proposed device with the respect to the reference device.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:03:15Z (GMT). No. of bitstreams: 1 HV7.pdf: 1945278 bytes, checksum: 59a2cc9faf13f58b0299d409394773f2 (MD5)en
dc.identifier.doi10.1063/1.4873395en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/12815
dc.language.isoEnglishen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4873395en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectEfficiency proopen_US
dc.subjectSpontaneous polarizationen_US
dc.subjectHigh-poweren_US
dc.subjectAlganen_US
dc.subjectLayeren_US
dc.titleSimultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodesen_US
dc.typeArticleen_US

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