Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage243504-3en_US
dc.citation.issueNumber24en_US
dc.citation.spage243504-1en_US
dc.citation.volumeNumber102en_US
dc.contributor.authorJu, Z. G.en_US
dc.contributor.authorLiu, W.en_US
dc.contributor.authorZhang, Z. H.en_US
dc.contributor.authorTan, S. T.en_US
dc.contributor.authorJi, Y.en_US
dc.contributor.authorKyaw, Z. B.en_US
dc.contributor.authorZhang, X. L.en_US
dc.contributor.authorLu, S. P.en_US
dc.contributor.authorZhang, Y. P.en_US
dc.contributor.authorZhu, B.en_US
dc.contributor.authorHasanov, N.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T11:58:52Z
dc.date.available2015-07-28T11:58:52Z
dc.date.issued2013en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractInGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T11:58:52Z (GMT). No. of bitstreams: 1 10.1063-1.4811698.pdf: 972326 bytes, checksum: f908e73f02220b626c6cb8473d057531 (MD5)en
dc.identifier.doi10.1063/1.4811698en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/11809
dc.language.isoEnglishen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4811698en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectActive Regionsen_US
dc.subjectBarrier Thicknessen_US
dc.subjectEfficiency Droopsen_US
dc.subjectHole Distributionen_US
dc.subjectIngan/gan Lightemitting Diodes (leds)en_US
dc.subjectLight Output Poweren_US
dc.subjectQuantum Barriersen_US
dc.subjectRadiative Recombination Rateen_US
dc.subjectGallium Nitrideen_US
dc.subjectOrganic Chemicalsen_US
dc.subjectLight Emitting Diodesen_US
dc.titleImproved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriersen_US
dc.typeArticleen_US

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