Electro-optical performances of nanostructured SrTiOx films: The effect of plasma power, Ar/O2 ratio and annealing

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buir.contributor.authorGoldenberg, Eda
buir.contributor.authorBayrak, Türkan
buir.contributor.orcidGoldenberg, Eda|0000-0003-4709-6591
buir.contributor.orcidBayrak, Türkan|0000-0003-0549-2326
dc.citation.epage642en_US
dc.citation.issueNumber3en_US
dc.citation.spage631en_US
dc.citation.volumeNumber18en_US
dc.contributor.authorGoldenberg, Eda
dc.contributor.authorBayrak, Türkan
dc.contributor.authorMohammadmoradi, O.
dc.date.accessioned2022-02-15T07:14:20Z
dc.date.available2022-02-15T07:14:20Z
dc.date.issued2021-01-01
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe present work evaluates the effects of plasma power and oxygen mixing ratios (OMRs) on structural, morphological, optical, and electrical properties of strontium titanate SrTiOx (STO) thin films. STO thin films were grown by magnetron sputtering, and later thermal annealing at 700°C for 1 h was applied to improve film properties. X-ray diffraction analysis indicated that as-deposited films have amorphous microstructure independent of deposition conditions. The films deposited at higher OMR values and later annealed also showed amorphous structure while the films deposited at lower OMR value and annealed have nanocrystallinity. In addition, all as-deposited films were highly transparent (~80%–85%) in the visible spectrum and exhibited well-defined main absorption edge, while the annealing improved transparency (90%) within the same spectrum. The calculated direct and indirect optical band gaps for films were in the range of 3.60-4.30 eV as a function of deposition conditions. The refractive index of the films increased with OMRs and the postdeposition annealing. The frequency dependent capacitance measurements at 100 kHz were performed to obtain film dielectric constant values. High dielectric constant values reaching up to 100 were obtained. All STO samples exhibited more than 2.5 μC/cm2 charge storage capacity and low dielectric loss (less than 0.07 at 100 kHz). The leakage current density was relatively low (3 × 10−8Acm−2 at +0.8 V) indicating that STO films are promising for future dynamic random access memory applications.en_US
dc.identifier.doi10.1111/ijac.13705en_US
dc.identifier.issn1546-542X
dc.identifier.urihttp://hdl.handle.net/11693/77350
dc.language.isoEnglishen_US
dc.publisherWiley-Blackwell Publishing, Inc.en_US
dc.relation.isversionofhttps://doi.org/10.1111/ijac.13705en_US
dc.source.titleInternational Journal of Applied Ceramic Technologyen_US
dc.subjectCharge storage capacityen_US
dc.subjectDielectric constant,en_US
dc.subjectElectrical propertiesen_US
dc.subjectOptical propertiesen_US
dc.subjectOxide thin filmsen_US
dc.subjectStrontium titanateen_US
dc.titleElectro-optical performances of nanostructured SrTiOx films: The effect of plasma power, Ar/O2 ratio and annealingen_US
dc.typeArticleen_US

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