Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage744en_US
dc.citation.issueNumber6en_US
dc.citation.spage733en_US
dc.citation.volumeNumber51en_US
dc.contributor.authorTiras, E.en_US
dc.contributor.authorCelik O.en_US
dc.contributor.authorMutlu, S.en_US
dc.contributor.authorArdali, S.en_US
dc.contributor.authorLisesivdin, S.B.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:46:38Z
dc.date.available2016-02-08T09:46:38Z
dc.date.issued2012en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T e) of hot electrons was obtained from the lattice temperature (T L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al 0.25Ga 0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures. © 2012 Elsevier Ltd. All rights reserved.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:46:38Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2012en
dc.identifier.doi10.1016/j.spmi.2012.03.029en_US
dc.identifier.issn0749-6036
dc.identifier.urihttp://hdl.handle.net/11693/21460
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.spmi.2012.03.029en_US
dc.source.titleSuperlattices and Microstructuresen_US
dc.subjectElectron energy relaxationen_US
dc.subjectGaN heterostructureen_US
dc.subjectHall mobilityen_US
dc.subjectPhonon emissionen_US
dc.subjectPower lossen_US
dc.subjectShubnikov-de Haasen_US
dc.subjectAcoustic phononsen_US
dc.subjectAlGaN/AlN/GaNen_US
dc.subjectCurrent theoretical modelsen_US
dc.subjectElectric field dependenciesen_US
dc.subjectElectron energiesen_US
dc.subjectEnergy relaxationen_US
dc.subjectExperimental techniquesen_US
dc.subjectLattice temperaturesen_US
dc.subjectOptical phonon emissionen_US
dc.subjectPhonon emissionsen_US
dc.subjectPower-lossesen_US
dc.subjectShubnikov-de Haasen_US
dc.subjectTemperature dependenceen_US
dc.subjectTemperature dependent energyen_US
dc.subjectTHz emissionen_US
dc.subjectDissociationen_US
dc.subjectElectron energy levelsen_US
dc.subjectElectron temperatureen_US
dc.subjectGallium nitrideen_US
dc.subjectHall mobilityen_US
dc.subjectHot electronsen_US
dc.subjectPhononsen_US
dc.subjectHeterojunctionsen_US
dc.titleTemperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructuresen_US
dc.typeArticleen_US

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