Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

Date
2012
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Superlattices and Microstructures
Print ISSN
0749-6036
Electronic ISSN
Publisher
Volume
51
Issue
6
Pages
733 - 744
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Series
Abstract

The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T e) of hot electrons was obtained from the lattice temperature (T L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al 0.25Ga 0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures. © 2012 Elsevier Ltd. All rights reserved.

Course
Other identifiers
Book Title
Keywords
Electron energy relaxation, GaN heterostructure, Hall mobility, Phonon emission, Power loss, Shubnikov-de Haas, Acoustic phonons, AlGaN/AlN/GaN, Current theoretical models, Electric field dependencies, Electron energies, Energy relaxation, Experimental techniques, Lattice temperatures, Optical phonon emission, Phonon emissions, Power-losses, Shubnikov-de Haas, Temperature dependence, Temperature dependent energy, THz emission, Dissociation, Electron energy levels, Electron temperature, Gallium nitride, Hall mobility, Hot electrons, Phonons, Heterojunctions
Citation
Published Version (Please cite this version)