Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate

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buir.contributor.authorArslan, Engin
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage1731en_US
dc.citation.issueNumber14en_US
dc.citation.spage1715en_US
dc.citation.volumeNumber99en_US
dc.contributor.authorArslan, Enginen_US
dc.contributor.authorÖztürk, M. K.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2020-02-21T10:59:57Z
dc.date.available2020-02-21T10:59:57Z
dc.date.issued2019-04-08
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe influence of the LT-AlN(NL) growth times on the mosaic structure parameters of the AlN layer grown on the LT-AlN(NL)/6H-SiC structures as well as the dislocation densities and the strain behaviours in the AlN epilayers has been investigated using XRD measurements. The growth times of the LT-AlN(NL) were changed to 0, 60, 120, 180, and 240 s. We observed that the mosaic structure parameters of the AlN epilayers were slightly affected by the LT-AlN(NL) growth times. However, the dislocation densities in the AlN layer are affected by the growth times of the LT-AlN(NL) layer. The highest edge dislocation density (5.48 × 1010 ± 2.3 × 109 cm−2) was measured for the sample in which 120 s grown LT-AlN(NL) was used. On the other hand, highest screw type dislocation density (1.21 × 1010 ± 1.7 × 109 cm−2) measured in the sample E that contains 240 s growth LT-AlN(NL). The strain calculation results show that the samples without LT-AlN(NL) suffered maximum compressive in-plane strain (−10.9 × 10−3 ± 1.8 × 10−4), which can be suppressed by increasing the LT-AlN(NL) growth times. The out-of-plane strain also has a compressive character and its values increase with LT-AlN(NL) growth times between 60 and 180 s. Same out-of-plane strain values were measured for the LT-AlN(NL) growth times of 180 and 240 s. Furthermore, the form of the biaxial stress in the AlN epilayer changed from compressive to tensile when the LT-AlN(NL) growth times were greater than 120 s.en_US
dc.identifier.doi10.1080/14786435.2019.1600757en_US
dc.identifier.eissn1478-6443
dc.identifier.issn1478-6435
dc.identifier.urihttp://hdl.handle.net/11693/53470
dc.language.isoEnglishen_US
dc.publisherTaylor & Francisen_US
dc.relation.isversionofhttps://dx.doi.org/10.1080/14786435.2019.1600757en_US
dc.source.titlePhilosophical Magazineen_US
dc.subjectB1. AlN nucleation layeren_US
dc.subjectA1. Mosaic structuresen_US
dc.subjectA1. High resolution X-ray diffractionen_US
dc.subjectA3. Metalorganic chemical vapor deposition (MOCVD)en_US
dc.titleEffects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrateen_US
dc.typeArticleen_US

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Nanotechnology Research Center (NANOTAM)
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