Submicron size all-semiconductor vertical cavities with high Q

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buir.contributor.authorDemir, Abdullah
dc.contributor.authorDemir, Abdullahen_US
dc.contributor.authorApaydın, D.en_US
dc.contributor.authorKurt, H.en_US
dc.coverage.spatialMunich, Germanyen_US
dc.date.accessioned2020-01-27T13:16:49Zen_US
dc.date.available2020-01-27T13:16:49Zen_US
dc.date.issued2019en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.descriptionDate of Conference: 23-27 June 2019en_US
dc.descriptionConference Name: 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019en_US
dc.description.abstractThe miniaturization of lasers promises on-chip optical communications and data processing speeds that are beyond the capability of electronics and today's high-speed lasers. Lasers with low-power consumption are one of the most important parts in creating a photonics integrated architecture. This requirement was the motivating force behind the development of small laser and nanolasers. Here, we propose a new method that could be utilized to fabricate such a laser. Oxide-VCSELs require strict control of the oxidation process with significantly reduced reliability for small size, and micropillars have degraded Q with fabrication artifacts for submicron diameter pillars. We propose to use a phase-shifting current-blocking (PSCB) layer serving dual function for a nanocavity device (Fig. 1a) providing both optical- and electrical-confinement via lithographically defined and selectively-biased buried structures. Phase-shifting leads to optical-confinement tuning by layer thickness control and current-blocking provides electrical-confinement. By modifying the dimensions of these layers, the confinement can be tuned by lithographic means. We studied the electromagnetic wave propagation and analyzed the quality factor (Q) of these cavities based on 3D finite difference time domain (FDTD) calculations.en_US
dc.description.provenanceSubmitted by Zeynep Aykut (zeynepay@bilkent.edu.tr) on 2020-01-27T13:16:49Z No. of bitstreams: 1 Submicron_size_all-semiconductor_vertical_cavities_with_high_Q.pdf: 296777 bytes, checksum: f9b52a5f4c249ce181fc0e5f49d3a9d8 (MD5)en
dc.description.provenanceMade available in DSpace on 2020-01-27T13:16:49Z (GMT). No. of bitstreams: 1 Submicron_size_all-semiconductor_vertical_cavities_with_high_Q.pdf: 296777 bytes, checksum: f9b52a5f4c249ce181fc0e5f49d3a9d8 (MD5) Previous issue date: 2019en
dc.description.sponsorshipEPS Young Mindsen_US
dc.description.sponsorshipQuantum Electronics and Optics Divisionen_US
dc.identifier.doi10.1109/CLEOE-EQEC.2019.8871518en_US
dc.identifier.eisbn9781728104690en_US
dc.identifier.isbn9781728104706en_US
dc.identifier.urihttp://hdl.handle.net/11693/52845en_US
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.isversionofhttps://dx.doi.org/10.1109/CLEOE-EQEC.2019.8871518en_US
dc.source.title2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019en_US
dc.subjectCavity resonatorsen_US
dc.subjectQ-factoren_US
dc.subjectDistributed Bragg reflectorsen_US
dc.subjectPhotonicsen_US
dc.subjectOptical reflectionen_US
dc.subjectVertical cavity surface emitting lasersen_US
dc.titleSubmicron size all-semiconductor vertical cavities with high Qen_US
dc.typeConference Paperen_US

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