High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm

buir.contributor.authorDemir, Abdullah
buir.contributor.orcidDemir, Abdullah|0000-0003-4678-0084
dc.citation.epage7en_US
dc.citation.spage1en_US
dc.citation.volumeNumber141en_US
dc.contributor.authorLiu, Y.
dc.contributor.authorYang, G.
dc.contributor.authorWang, Z.
dc.contributor.authorLi, T.
dc.contributor.authorTang, S.
dc.contributor.authorZhao, Y.
dc.contributor.authorLan, Y.
dc.contributor.authorDemir, Abdullah
dc.date.accessioned2022-02-23T09:26:54Z
dc.date.available2022-02-23T09:26:54Z
dc.date.issued2021-04-28
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractBroad-area diode lasers with high output power and low lateral divergence angle are highly desired for extensive scientific and industrial applications. Here, we report on the epitaxial design for higher output power and a flared waveguide design for reduced divergence, which leads to high power operation with a low lateral divergence angle. A vertically asymmetric epitaxial structure was employed and optimized for low internal optical loss and high efficiency to realize high output power operation. Using a flared waveguide design, the lateral divergence angle was efficiently reduced by decreasing the number of high-order lateral optical modes significantly. The flared waveguide design introduces a smooth modification of the ridge width along the cavity without deteriorating laser performance. Based on the optimized epitaxial and waveguide design, we scaled the waveguide width to realize high continuous-wave power of 34.5 W at 25 °C. A low lateral divergence angle of 8° and high power conversion efficiency of 60% were achieved at the operating power level of 25 W. The life test data (30 A at 45 °C for 39 units, 0 failures in 1000 h) demonstrated reliable operation illustrating the efficient design for reduced lateral divergence angle and high operating power.en_US
dc.embargo.release2023-04-28
dc.identifier.doi10.1016/j.optlastec.2021.107145en_US
dc.identifier.eissn1879-2545
dc.identifier.issn0030-3992
dc.identifier.urihttp://hdl.handle.net/11693/77573
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttps://doi.org/10.1016/j.optlastec.2021.107145en_US
dc.source.titleOptics & Laser Technologyen_US
dc.subjectSemiconductor laseren_US
dc.subjectDiode laseren_US
dc.subjectHigh poweren_US
dc.subjectHigh efficiencyen_US
dc.subjectLow divergence angleen_US
dc.subjectHigh brightnessen_US
dc.subject976 nmen_US
dc.titleHigh-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nmen_US
dc.typeArticleen_US

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