Thermally stimulated currents in layered Ga4SeS3 semiconductor

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage2985en_US
dc.citation.issueNumber13en_US
dc.citation.spage2980en_US
dc.citation.volumeNumber201en_US
dc.contributor.authorAytekin, S.en_US
dc.contributor.authorYuksek, N.S.en_US
dc.contributor.authorGoktepe, M.en_US
dc.contributor.authorGasanly, N.M.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2016-02-08T10:25:51Z
dc.date.available2016-02-08T10:25:51Z
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the current flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chcn's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calculation yielded 7.9 × 10-21,7.0 × 10 -19 and 1.5 × 10-13 cm2 for the capture cross section, and 1.6 × 1010, 6.5 × 1010 and 1.2 × 1011 cm-3 for the concentration of the traps studied. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinlteim.en_US
dc.identifier.doi10.1002/pssa.200406854en_US
dc.identifier.issn0031-8965
dc.identifier.urihttp://hdl.handle.net/11693/24218
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssa.200406854en_US
dc.source.titlePhysica Status Solidi (A) Applied Researchen_US
dc.subjectActivation energyen_US
dc.subjectElectric current measurementen_US
dc.subjectElectron trapsen_US
dc.subjectEnergy gapen_US
dc.subjectHigh temperature effectsen_US
dc.subjectOptical switchesen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectPhotodetectorsen_US
dc.subjectAtomic planesen_US
dc.subjectInterlayer bondsen_US
dc.subjectOptical switching devicesen_US
dc.subjectThermally stimulated current (TSC)en_US
dc.subjectSemiconducting gallium compoundsen_US
dc.titleThermally stimulated currents in layered Ga4SeS3 semiconductoren_US
dc.typeArticleen_US

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