Thermally stimulated currents in layered Ga4SeS3 semiconductor

Abstract

Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the current flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chcn's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calculation yielded 7.9 × 10-21,7.0 × 10 -19 and 1.5 × 10-13 cm2 for the capture cross section, and 1.6 × 1010, 6.5 × 1010 and 1.2 × 1011 cm-3 for the concentration of the traps studied. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinlteim.