Thermally stimulated currents in layered Ga4SeS3 semiconductor

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Thermally stimulated currents in layered Ga4SeS3 semiconductor.pdf (169.23 KB)

Date

2004

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Source Title

Physica Status Solidi (A) Applied Research

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0031-8965

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Volume

201

Issue

13

Pages

2980 - 2985

Language

English

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Article

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Abstract

Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the current flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chcn's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calculation yielded 7.9 × 10-21,7.0 × 10 -19 and 1.5 × 10-13 cm2 for the capture cross section, and 1.6 × 1010, 6.5 × 1010 and 1.2 × 1011 cm-3 for the concentration of the traps studied. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinlteim.

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Keywords

Activation energy, Electric current measurement, Electron traps, Energy gap, High temperature effects, Optical switches, Optoelectronic devices, Photodetectors, Atomic planes, Interlayer bonds, Optical switching devices, Thermally stimulated current (TSC), Semiconducting gallium compounds

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http://hdl.handle.net/11693/24218

Published Version (Please cite this version)

http://dx.doi.org/10.1002/pssa.200406854

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Scholarly Publications - Physics