Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures

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buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.volumeNumber7945en_US
dc.contributor.authorJang L.-W.en_US
dc.contributor.authorJu J.-W.en_US
dc.contributor.authorJeon J.-W.en_US
dc.contributor.authorJeon, D.-W.en_US
dc.contributor.authorChoi J.-H.en_US
dc.contributor.authorLee, S.-J.en_US
dc.contributor.authorJeon, S.-R.en_US
dc.contributor.authorBaek J.-H.en_US
dc.contributor.authorSarı, Emreen_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.contributor.authorYoon H.-D.en_US
dc.contributor.authorHwang, S.-M.en_US
dc.contributor.authorLee I.-H.en_US
dc.coverage.spatialSan Francisco, California, United Statesen_US
dc.date.accessioned2016-02-08T12:19:45Z
dc.date.available2016-02-08T12:19:45Z
dc.date.issued2011en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionConference name: Proceedings of SPIE, Quantum Sensing and Nanophotonic Devices VIIIen_US
dc.descriptionDate of Conference: 23–27 January 2011en_US
dc.description.abstractWe investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode structure, the p-GaN layer was roughened by inductive coupled plasma etching and the Ag nanostructures were formed on it. This structure showed a drastic enhancement in photoluminescence and electroluminescence intensity and the degree of enhancement was found to depend on the morphology of Ag nanostructures. From the time-resolved photoluminescence measurement a faster decay rate for the Ag-coated structure was observed. The calculated Purcell enhancement factor indicated that the improved luminescence intensity was attributed to the energy transfer from electron-hole pair recombination in the quantum well to electron vibrations of surface plasmon at the Ag-coated surface of the roughened p-GaN. © 2011 SPIE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:19:45Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2011en
dc.identifier.doi10.1117/12.869465en_US
dc.identifier.issn0277-786X
dc.identifier.urihttp://hdl.handle.net/11693/28405
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.869465en_US
dc.source.titleProceedings of SPIEen_US
dc.subjectBlue light emitting diodesen_US
dc.subjectDecay rateen_US
dc.subjectElectroluminescence intensityen_US
dc.subjectElectron hole pairsen_US
dc.subjectElectron vibrationsen_US
dc.subjectEnhancement factoren_US
dc.subjectInductive coupled plasmaen_US
dc.subjectInGaN/GaNen_US
dc.subjectLuminescence intensityen_US
dc.subjectMultiple quantum wellsen_US
dc.subjectOptical characteristicsen_US
dc.subjectP-type GaNen_US
dc.subjectQuantum wellen_US
dc.subjectSurface plasmon couplingen_US
dc.subjectSurface plasmonsen_US
dc.subjectTime-resolved photoluminescenceen_US
dc.subjectDecay (organic)en_US
dc.subjectEnergy transferen_US
dc.subjectGallium nitrideen_US
dc.subjectLighten_US
dc.subjectLight emissionen_US
dc.subjectLight emitting diodesen_US
dc.subjectNanophotonicsen_US
dc.subjectNanostructuresen_US
dc.subjectPhotoluminescenceen_US
dc.subjectPlasma etchingen_US
dc.subjectPlasmonsen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectWater analysisen_US
dc.subjectSilveren_US
dc.titleEnhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructuresen_US
dc.typeConference Paperen_US

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