Rapid thermal annealing of graphene-metal contact
| dc.citation.epage | 243105-5 | en_US |
| dc.citation.issueNumber | 24 | en_US |
| dc.citation.spage | 243105-1 | en_US |
| dc.citation.volumeNumber | 101 | en_US |
| dc.contributor.author | Balci, O. | en_US |
| dc.contributor.author | Kocabas, C. | en_US |
| dc.date.accessioned | 2016-02-08T09:42:36Z | |
| dc.date.available | 2016-02-08T09:42:36Z | |
| dc.date.issued | 2012 | en_US |
| dc.department | Department of Physics | en_US |
| dc.description.abstract | High quality graphene-metal contacts are desirable for high-performance graphene based electronics. Process related factors result large variation in the contact resistance. A post-processing method is needed to improve graphene-metal contacts. In this letter, we studied rapid thermal annealing (RTA) of graphene-metal contacts. We present results of a systematic investigation of device scaling before and after RTA for various metals. The results reveal that RTA provides a convenient technique to reduce contact resistance, thus to obtain reproducible device operation. © 2012 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.4769817 | en_US |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://hdl.handle.net/11693/21183 | |
| dc.language.iso | English | en_US |
| dc.publisher | A I P Publishing LLC | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.4769817 | en_US |
| dc.source.title | Applied Physics Letters | en_US |
| dc.title | Rapid thermal annealing of graphene-metal contact | en_US |
| dc.type | Article | en_US |
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