The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD

Simple item page
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage1110en_US
dc.citation.issueNumber4en_US
dc.citation.spage1105en_US
dc.citation.volumeNumber27en_US
dc.contributor.authorCetđn, S.en_US
dc.contributor.authorSağlam, S.en_US
dc.contributor.authorOzcelđk, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T11:02:25Z
dc.date.available2016-02-08T11:02:25Z
dc.date.issued2014en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractFive period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples. ©2014 Gazi University Eti Mahallesi. All rights reserved.en_US
dc.identifier.issn13039709
dc.identifier.urihttp://hdl.handle.net/11693/26616
dc.language.isoEnglishen_US
dc.publisherGazi University Eti Mahallesien_US
dc.source.titleGazi University Journal of Scienceen_US
dc.subjectHigh resolution X-ray diffractionen_US
dc.subjectInGaNen_US
dc.subjectLight emitting diodeen_US
dc.subjectMetalorganic chemical vapor depositionen_US
dc.subjectMulti quantum wellen_US
dc.subjectPhotoluminescenceen_US
dc.subjectFlow rateen_US
dc.subjectGrowth temperatureen_US
dc.subjectIndiumen_US
dc.subjectLight emitting diodesen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSapphireen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectX ray diffractionen_US
dc.subjectX ray diffraction analysisen_US
dc.subjectEmission wavelengthen_US
dc.subjectGrowth conditionsen_US
dc.subjectHigh resolution X ray diffractionen_US
dc.subjectInGaNen_US
dc.subjectLow-pressure MOCVDen_US
dc.subjectMulti quantum wellsen_US
dc.subjectRoom-temperature photoluminescenceen_US
dc.subjectSapphire substratesen_US
dc.subjectSemiconductor quantum wellsen_US
dc.titleThe effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVDen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
The effect of growth conditions on the optical and structural properties of InGaN GaN MQW LED structures grown by MOCVD.pdf
Size:
899.17 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Department of Physics
Department of Electrical and Electronics Engineering