A novel hot carrier-induced blue light-emitting device

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buir.contributor.authorArslan, Engin
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage7en_US
dc.citation.spage1en_US
dc.citation.volumeNumber881en_US
dc.contributor.authorMutlu, S.
dc.contributor.authorErol, A.
dc.contributor.authorArslan, Engin
dc.contributor.authorÖzbay, Ekmel
dc.contributor.authorLisesivdin, S. B.
dc.contributor.authorTiras, E.
dc.date.accessioned2022-02-17T08:44:08Z
dc.date.available2022-02-17T08:44:08Z
dc.date.issued2021-05-24
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light Emission and Lasing in a Semiconductor Heterostructure (Top-Hat HELLISH) is investigated. A heterojunction structure is designed based on an active InGaN quantum well placed in the n-type GaN region sandwiched by the n- and p-type GaN layers. The four quantum well structure of an InGaN/GaN heterojunction where the Indium ratio is 0.16 has been grown via Metal-Organic Chemical Vapor Deposition. In order to create an anisotropic potential distribution of the heterojunction, it is aimed to fabricate TH-HELLISH-GaN device in Top-Hat HELLISH (THH) geometry for four contacts with separate n- and p-channels. High-speed I-V measurements of the device reveal an Ohmic characteristic at both polarities of the applied voltage. Integrated EL measurements reveal the threshold of the applied electric field at around 0.25 kV/cm. The emission wavelength of the device is around 440 ± 1 nm at room temperature.en_US
dc.embargo.release2023-05-24
dc.identifier.doi10.1016/j.jallcom.2021.160511en_US
dc.identifier.eissn1873-4669
dc.identifier.issn0925-8388
dc.identifier.urihttp://hdl.handle.net/11693/77458
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttps://doi.org/10.1016/j.jallcom.2021.160511en_US
dc.source.titleJournal of Alloys and Compoundsen_US
dc.subjectTop-Hat HELLISHen_US
dc.subjectInGaN/GaN multi quantum wellen_US
dc.subjectField effecten_US
dc.subjectXOR logicen_US
dc.subjectBlue lighten_US
dc.titleA novel hot carrier-induced blue light-emitting deviceen_US
dc.typeArticleen_US

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