A novel hot carrier-induced blue light-emitting device

In this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light Emission and Lasing in a Semiconductor Heterostructure (Top-Hat HELLISH) is investigated. A heterojunction structure is designed based on an active InGaN quantum well placed in the n-type GaN region sandwiched by the n- and p-type GaN layers. The four quantum well structure of an InGaN/GaN heterojunction where the Indium ratio is 0.16 has been grown via Metal-Organic Chemical Vapor Deposition. In order to create an anisotropic potential distribution of the heterojunction, it is aimed to fabricate TH-HELLISH-GaN device in Top-Hat HELLISH (THH) geometry for four contacts with separate n- and p-channels. High-speed I-V measurements of the device reveal an Ohmic characteristic at both polarities of the applied voltage. Integrated EL measurements reveal the threshold of the applied electric field at around 0.25 kV/cm. The emission wavelength of the device is around 440 ± 1 nm at room temperature.