OptMem: dark-silicon aware low latency hybrid memory design

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2016-01

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Abstract

In this article, we present a convex optimization model to design a three dimension (3D)stacked hybrid memory system to improve performance in the dark silicon era. Our convex model optimizes numbers and placement of static random access memory (SRAM) and spin-Transfer torque magnetic random-Access memory(STT-RAM) memories on the memory layer to exploit advantages of both technologies. Power consumption that is the main challenge in the dark silicon era is represented as a main constraint in this work and it is satisfied by the detailed optimization model in order to design a dark silicon aware 3D Chip-Multiprocessor (CMP). Experimental results show that the proposed architecture improves the energy consumption and performanceof the 3D CMPabout 25.8% and 12.9% on averagecompared to the Baseline memory design. © 2016 IEEE.

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2016 International Conference on VLSI Systems, Architectures, Technology and Applications, VLSI-SATA 2016

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IEEE

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Published Version (Please cite this version)

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English