Donor - acceptor pair recombination in Tl2InGaS4 layered crystals

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage271en_US
dc.citation.issueNumber2en_US
dc.citation.spage267en_US
dc.citation.volumeNumber47en_US
dc.contributor.authorGoksen, K.en_US
dc.contributor.authorGasanly, N.M.en_US
dc.contributor.authorOzkan H.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2016-02-08T10:22:45Z
dc.date.available2016-02-08T10:22:45Z
dc.date.issued2005en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractPhotoluminescence (PL) spectra of Tl2InGaS4 layered single crystals were studied in the temperature range 15-150 K and wide laser excitation intensity range 0.01-110.34 Wcm-2. We observed a total of three PL bands, one centered at 542 nm (2.286 eV, A-band), one at 607 nm (2.041 eV, B-band), and one at 707 nm (1.754 eV, C-band), at various excitation intensities. The A- and the B-bands were determined to be due to radiative transitions from moderately deep donor levels located at 0.189 and 0.443 eV below the bottom of the conduction band to the shallow acceptor levels at 0.025 and 0.016 eV above the top of the valence band, respectively. The blue shift of the C-band peak energy and the quenching of the PL with increasing temperature are explained within the configuration coordinate model. The observation in the PL spectra of different emission bands in the sequence of B-, C- and A-bands at low, moderate, and high excitation laser intensities, respectively, are attributed to the shift of the quasi-Fermi level with increasing excitation intensity.en_US
dc.identifier.issn03744884
dc.identifier.urihttp://hdl.handle.net/11693/24010
dc.language.isoEnglishen_US
dc.source.titleJournal of the Korean Physical Societyen_US
dc.subjectDefect levelsen_US
dc.subjectLayered crystalsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSemiconductorsen_US
dc.subjectTl 2InGaS4en_US
dc.titleDonor - acceptor pair recombination in Tl2InGaS4 layered crystalsen_US
dc.typeArticleen_US

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