Low-temperature self-limiting growth of III-Nitride thin films by plasma-enhanced atomic layer deposition
buir.contributor.author | Bıyıklı, Necmi | |
dc.citation.epage | 1014 | en_US |
dc.citation.spage | 1008 | en_US |
dc.citation.volumeNumber | 4 | en_US |
dc.contributor.author | Bıyıklı, Necmi | en_US |
dc.contributor.author | Ozgit, C. | en_US |
dc.contributor.author | Donmez, I. | en_US |
dc.date.accessioned | 2019-03-27T19:02:39Z | |
dc.date.available | 2019-03-27T19:02:39Z | |
dc.date.issued | 2012 | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.identifier.uri | http://hdl.handle.net/11693/50759 | |
dc.language.iso | English | en_US |
dc.source.title | Nanoscience and Nanotechnology Letters | en_US |
dc.title | Low-temperature self-limiting growth of III-Nitride thin films by plasma-enhanced atomic layer deposition | en_US |
dc.type | Article | en_US |