Low-temperature self-limiting growth of III-Nitride thin films by plasma-enhanced atomic layer deposition

buir.contributor.authorBıyıklı, Necmi
dc.citation.epage1014en_US
dc.citation.spage1008en_US
dc.citation.volumeNumber4en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorOzgit, C.en_US
dc.contributor.authorDonmez, I.en_US
dc.date.accessioned2019-03-27T19:02:39Z
dc.date.available2019-03-27T19:02:39Z
dc.date.issued2012en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.identifier.urihttp://hdl.handle.net/11693/50759
dc.language.isoEnglishen_US
dc.source.titleNanoscience and Nanotechnology Lettersen_US
dc.titleLow-temperature self-limiting growth of III-Nitride thin films by plasma-enhanced atomic layer depositionen_US
dc.typeArticleen_US

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