XPS measurements for probing dynamics of charging

buir.contributor.authorSüzer, Şefik
dc.citation.epage57en_US
dc.citation.issueNumber1-3en_US
dc.citation.spage52en_US
dc.citation.volumeNumber176en_US
dc.contributor.authorSüzer, Şefiken_US
dc.contributor.authorSezen, H.en_US
dc.contributor.authorErtas, G.en_US
dc.contributor.authorDâna, A.en_US
dc.date.accessioned2016-02-08T10:00:33Z
dc.date.available2016-02-08T10:00:33Z
dc.date.issued2010en_US
dc.departmentDepartment of Chemistryen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThe technique of recording X-ray photoemission data while the sample rod is subjected to ±10.0 V (dc) or square-wave pulses (ac) with varying frequencies in the range of 10-3 to 103 Hz for probing charging/discharging dynamics of dielectric materials, is reviewed. Application of this technique introduces charging shifts as well as broadening of the peaks, which depend non-linearly on the polarity, as well as on the frequency of the pulses applied. These changes have been measured on: (i) an artificially created dielectric sample consisting of a Au metal strip connected externally to a series resistor of 1 MΩ and a parallel capacitor of 56 nF, and two real dielectric films; (ii) a 20 nm organic polystyrene film spin-coated on a silicon substrate; (iii) a 10 nm SiO2 inorganic layer thermally grown on silicon. A simple circuit model is introduced to simulate the charging shifts and the peak broadenings. Although this simple model faithfully reproduces the charging shifts in all three cases, and also some of the broadenings for the artificial dielectric and the polystyrene film, the additional broadening in the negatively charged peaks of the SiO2 dielectric film cannot be accounted for. It is also claimed that these experimental findings can be used for extracting material-specific dielectric properties.en_US
dc.identifier.doi10.1016/j.elspec.2009.02.003en_US
dc.identifier.eissn1873-2526
dc.identifier.issn0368-2048
dc.identifier.urihttp://hdl.handle.net/11693/22470
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.elspec.2009.02.003en_US
dc.source.titleJournal of Electron Spectroscopy and Related Phenomenaen_US
dc.subjectCapacitance measurements using XPSen_US
dc.subjectDifferential chargingen_US
dc.subjectDynamical XPSen_US
dc.subjectDielectric propertiesen_US
dc.subjectResistanceen_US
dc.titleXPS measurements for probing dynamics of chargingen_US
dc.typeArticleen_US
Files