ZnO based optical modulator in the visible wavelengths
Date
2013
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Abstract
In order to demonstrate tunable absorption characteristics of ZnO, photodetection properties of ZnO based thin-film transistors are investigated. By controlling the occupancy of the trap states, the optical absorption coefficient of ZnO in the visible light spectrum is actively tuned with gate bias. An order of magnitude change of absorption coefficient is achieved. An optical modulator is proposed exploiting such tunable absorption mechanism. © 2013 SPIE.
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Proceedings of SPIE
Publisher
SPIE
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Keywords
Atomic layer deposition, Metal oxides, Optical modulator, Thin film transistor, Tunable absorber, ZnO, Absorption characteristics, Absorption co-efficient, Absorption mechanisms, Metal oxides, Optical absorption coefficients, Tunable absorber, Visible wavelengths, ZnO, Atomic layer deposition, Light modulators, Thin film transistors, Zinc oxide
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Language
English