SiC substrate effects on electron transport in the epitaxial graphene layer

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage391en_US
dc.citation.issueNumber2en_US
dc.citation.spage387en_US
dc.citation.volumeNumber10en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorÇakmakyapan S.en_US
dc.contributor.authorKazar, Ö.en_US
dc.contributor.authorBütün, S.en_US
dc.contributor.authorLişesivdin, S. B.en_US
dc.contributor.authorCinel, N. A.en_US
dc.contributor.authorErtaş, G.en_US
dc.contributor.authorArdalı, Ş.en_US
dc.contributor.authorTıraş, E.en_US
dc.contributor.authorJawad-ul-Hassan,en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorJanzén, E.en_US
dc.date.accessioned2016-02-08T11:02:41Z
dc.date.available2016-02-08T11:02:41Z
dc.date.issued2014en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Chemistryen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractHall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one highmobility carrier (3493 cm2 /Vs at 300 K) and one low-mobility carrier (1115 cm2 /Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.en_US
dc.identifier.doi10.1007/s13391-013-3159-2en_US
dc.identifier.issn1738-8090
dc.identifier.urihttp://hdl.handle.net/11693/26638
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s13391-013-3159-2en_US
dc.source.titleElectronic Materials Lettersen_US
dc.subjectGrapheneen_US
dc.subjectParallel conductionen_US
dc.subjectRaman spectroscopyen_US
dc.subjectHall measurementsen_US
dc.titleSiC substrate effects on electron transport in the epitaxial graphene layeren_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
Department of Chemistry
Department of Physics
Nanotechnology Research Center (NANOTAM)