Capacitance-conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer

Date
2015
Advisor
Instructor
Source Title
Materials Research Express
Print ISSN
2053-1591
Electronic ISSN
Publisher
Institute of Physics Publishing
Volume
2
Issue
4
Pages
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

High-k Al2O3 with metallic oxide thickness of about 3 nmon n-type GaAs substrate has been deposited by the atomic layer deposition (ALD) technique. Thus, it has been formed the Au-Ti/Al2O3/n-GaAs MIS structures. It has been seen that the MIS structure exhibits excellent capacitance-voltage (C-V) and current-voltage (I-V) properties at 300 K. The saturation current of the forward bias and reverse bias I-V characteristics was the same value. An ideality factor value of 1.10 has been obtained from the forward bias I-V characteristics. The C-Vcharacteristics of the structure have shown almost no hysteresis from +3 Vto -10 Vwith frequency as a parameter. The reverse biasC-V curves have exhibited a behavior without frequency dispersion and almost hysteresis at each frequency from 10 kHz to 1000 kHz.

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Other identifiers
Book Title
Keywords
Atomic layer dedeposition, High dielectric material, MIS devices
Citation
Published Version (Please cite this version)