Solar-blind AlxGa1-xN-based avalanche photodiodes
| buir.contributor.author | Özbay, Ekmel | |
| buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
| dc.citation.epage | 223502-1 | en_US |
| dc.citation.issueNumber | 22 | en_US |
| dc.citation.spage | 223502-3 | en_US |
| dc.citation.volumeNumber | 87 | en_US |
| dc.contributor.author | Tut, T. | en_US |
| dc.contributor.author | Butun, S. | en_US |
| dc.contributor.author | Butun, B. | en_US |
| dc.contributor.author | Gokkavas, M. | en_US |
| dc.contributor.author | Yu, H. B. | en_US |
| dc.contributor.author | Özbay, Ekmel | en_US |
| dc.date.accessioned | 2015-07-28T12:06:17Z | |
| dc.date.available | 2015-07-28T12:06:17Z | |
| dc.date.issued | 2005 | en_US |
| dc.department | Department of Physics | en_US |
| dc.department | Department of Electrical and Electronics Engineering | en_US |
| dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
| dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
| dc.description.abstract | We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 mu m diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10(-16) W/Hz(1/2). | en_US |
| dc.description.provenance | Made available in DSpace on 2015-07-28T12:06:17Z (GMT). No. of bitstreams: 1 10.1063-1.2135952.pdf: 526940 bytes, checksum: 9aa0e1cef55e5da5f09031fa78f1d730 (MD5) | en |
| dc.identifier.doi | 10.1063/1.2135952 | en_US |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://hdl.handle.net/11693/13424 | |
| dc.language.iso | English | en_US |
| dc.publisher | American Institute of Physics | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.2135952 | en_US |
| dc.source.title | Applied Physics Letters | en_US |
| dc.subject | Low dark current | en_US |
| dc.subject | Algan | en_US |
| dc.subject | Photodetectors | en_US |
| dc.title | Solar-blind AlxGa1-xN-based avalanche photodiodes | en_US |
| dc.type | Article | en_US |
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