ITO-schottky photodiodes for high-performance detection in the UV-IR spectrum

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage765en_US
dc.citation.issueNumber4en_US
dc.citation.spage759en_US
dc.citation.volumeNumber10en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorButun, B.en_US
dc.contributor.authorAytür, O.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:26:36Z
dc.date.available2016-02-08T10:26:36Z
dc.date.issued2004en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractHigh-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, InAlGaAs-InP, and InGaAsP-InP) were utilized for detection in the ultraviolet (UV) (λ < 400 nm), near-IR (λ ∼ 850 nm), and IR (λ ∼ 1550 nm) spectrum. The material properties of thin ITO films were characterized. Using resonant-cavity-enhanced (RCE) detector structures, improved efficiency performance was achieved. Current-voltage, spectral responsivity, and high-speed measurements were carried out on the fabricated ITO-Schottky devices. The device performances obtained with different material systems are compared.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:26:36Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2004en
dc.identifier.doi10.1109/JSTQE.2004.833977en_US
dc.identifier.issn1077-260X
dc.identifier.urihttp://hdl.handle.net/11693/24264
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JSTQE.2004.833977en_US
dc.source.titleIEEE Journal on Selected Topics in Quantum Electronicsen_US
dc.subjectHeterostructureen_US
dc.subjectHigh performanceen_US
dc.subjectIII-V alloysen_US
dc.subjectIndium-tin-oxide (ITO)en_US
dc.subjectPhotodiodeen_US
dc.subjectResonant cavityen_US
dc.subjectSchottkyen_US
dc.subjectBandwidthen_US
dc.subjectCarrier communicationen_US
dc.subjectElectric conductivityen_US
dc.subjectElectric currentsen_US
dc.subjectFabricationen_US
dc.subjectHeterojunctionsen_US
dc.subjectIndium compoundsen_US
dc.subjectInfrared spectrographsen_US
dc.subjectPhotodetectorsen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconductor materialsen_US
dc.subjectSpectrum analysisen_US
dc.subjectUltraviolet detectorsen_US
dc.subjectHigh performanceen_US
dc.subjectIII-V alloysen_US
dc.subjectIndium-tin-oxide (ITO)en_US
dc.subjectResonant cavityen_US
dc.subjectPhotodiodesen_US
dc.titleITO-schottky photodiodes for high-performance detection in the UV-IR spectrumen_US
dc.typeArticleen_US

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