High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage3892en_US
dc.citation.issueNumber24en_US
dc.citation.spage3890en_US
dc.citation.volumeNumber77en_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKartaloğlu, T.en_US
dc.contributor.authorAytür, O.en_US
dc.contributor.authorUnlu, S.en_US
dc.contributor.authorTuttle, G.en_US
dc.date.accessioned2016-02-08T10:36:19Z
dc.date.available2016-02-08T10:36:19Z
dc.date.issued2000en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractWe report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 μm and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1329628en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/24928
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physics.en_US
dc.relation.isversionofhttps://doi.org/10.1063/1.1329628en_US
dc.source.titleApplied Physics Lettersen_US
dc.titleHigh-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetectoren_US
dc.typeArticleen_US

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