Half-metallic silicon nanowires: First-principles calculations

buir.contributor.authorÇıracı, Salim
buir.contributor.authorDurgun, Engin
buir.contributor.orcidÇıracı, Salim|0000-0001-8023-9860
dc.citation.epage256806-4en_US
dc.citation.issueNumber25en_US
dc.citation.spage256806-1en_US
dc.citation.volumeNumber99en_US
dc.contributor.authorDurgun, Enginen_US
dc.contributor.authorÇakır, D.en_US
dc.contributor.authorAkman, N.en_US
dc.contributor.authorÇıracı, Salimen_US
dc.date.accessioned2016-02-08T10:10:53Z
dc.date.available2016-02-08T10:10:53Z
dc.date.issued2007en_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractFrom first-principles calculations, we predict that specific transition metal (TM) atom-adsorbed silicon nanowires have a half-metallic ground state. They are insulators for one spin direction, but show metallic properties for the opposite spin direction. At high coverage of TM atoms, ferromagnetic silicon nanowires become metallic for both spin directions with high magnetic moment and may have also significant spin polarization at the Fermi level. The spin-dependent electronic properties can be engineered by changing the type of adsorbed TM atoms, as well as the diameter of the nanowire. Present results are not only of scientific interest, but also can initiate new research on spintronic applications of silicon nanowires. © 2007 The American Physical Society.en_US
dc.identifier.doi10.1103/PhysRevLett.99.256806en_US
dc.identifier.issn0031-9007
dc.identifier.urihttp://hdl.handle.net/11693/23252
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.99.256806en_US
dc.source.titlePhysical Review Lettersen_US
dc.subjectAdsorptionen_US
dc.subjectFerromagnetic materialsen_US
dc.subjectMagnetic momentsen_US
dc.subjectSiliconen_US
dc.subjectSpin polarizationen_US
dc.subjectMetallic propertiesen_US
dc.subjectSilicon nanowiresen_US
dc.subjectNanowiresen_US
dc.titleHalf-metallic silicon nanowires: First-principles calculationsen_US
dc.typeArticleen_US

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