Atomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film Electronics

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.issueNumber9en_US
dc.citation.volumeNumber14en_US
dc.contributor.authorSisman, Z.en_US
dc.contributor.authorBolat, S.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2018-04-12T10:38:28Z
dc.date.available2018-04-12T10:38:28Z
dc.date.issued2017en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe report on the first demonstration of the atomic layer deposition (ALD) based three dimensional (3D) integrated ZnO thin film transistors (TFTs) on rigid substrates. Devices exhibit high on-off ratio (∼106) and high effective mobility (∼11.8 cm2 V−1 s−1). It has also been demonstrated that the steps of fabrication result in readily stable electrical characteristics in TFTs, eliminating the need for post-production steps. These results mark the potential of our fabrication method for the semiconducting metal oxide-based vertical-integrated circuits requiring high packing density and high functionality. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.description.provenanceMade available in DSpace on 2018-04-12T10:38:28Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2017en
dc.embargo.release2018-09-18en_US
dc.identifier.doi10.1002/pssc.201700128en_US
dc.identifier.issn1862-6351
dc.identifier.urihttp://hdl.handle.net/11693/36395
dc.language.isoEnglishen_US
dc.publisherWiley-VCH Verlagen_US
dc.relation.isversionofhttps://doi.org/10.1002/pssc.201700128en_US
dc.source.titlePhysica Status Solidi (C) Current Topics in Solid State Physicsen_US
dc.subject3D integrationen_US
dc.subjectAtomic layer depositionen_US
dc.subjectThin film transistorsen_US
dc.subjectAtomic layer depositionen_US
dc.subjectAtomsen_US
dc.subjectDepositionen_US
dc.subjectMetallic filmsen_US
dc.subjectMetalsen_US
dc.subjectOptical filmsen_US
dc.subjectThin film transistorsen_US
dc.subjectThin filmsen_US
dc.subjectZinc oxideen_US
dc.subject3-D integrationen_US
dc.subjectEffective mobilitiesen_US
dc.subjectElectrical characteristicen_US
dc.subjectFabrication methoden_US
dc.subjectHigh packing densityen_US
dc.subjectSemi-conducting metal oxidesen_US
dc.subjectThin film electronicsen_US
dc.subjectThreedimensional (3-d)en_US
dc.subjectThin film circuitsen_US
dc.titleAtomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film Electronicsen_US
dc.typeArticleen_US

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