Laser writing of nanostructures deep inside Gallium Arsenide (GaAs)

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dc.contributor.authorTokel, Onuren_US
dc.contributor.authorTurnalı, Ahmeten_US
dc.contributor.authorDeminskyi, Petroen_US
dc.contributor.authorİlday, Serimen_US
dc.contributor.authorİlday, F. Ömeren_US
dc.coverage.spatialHong Kong Chinaen_US
dc.date.accessioned2019-02-21T16:09:53Z
dc.date.available2019-02-21T16:09:53Z
dc.date.issued2018en_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionConference name: Conference on Lasers and Electro-Optics/Pacific Rim 2018en_US
dc.descriptionDate of Conference: 29 July–3 August 2018en_US
dc.description.abstractRecently, we have showed a direct laser writing method that enables the first subsurface modifications and functional devices created deep inside silicon. Here, we extend the technique demonstrating the first controlled subsurface nanostructures in GaAs.
dc.description.provenanceMade available in DSpace on 2019-02-21T16:09:53Z (GMT). No. of bitstreams: 1 Bilkent-research-paper.pdf: 222869 bytes, checksum: 842af2b9bd649e7f548593affdbafbb3 (MD5) Previous issue date: 2018en
dc.identifier.doi10.1364/CLEOPR.2018.W1E.2en_US
dc.identifier.isbn9781557528209
dc.identifier.urihttp://hdl.handle.net/11693/50481
dc.language.isoEnglish
dc.publisherOSA
dc.relation.isversionofhttps://doi.org/10.1364/CLEOPR.2018.W1E.2en_US
dc.source.titleCLEO Pacific Rim Conference 2018en_US
dc.titleLaser writing of nanostructures deep inside Gallium Arsenide (GaAs)en_US
dc.typeConference Paperen_US

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