Laser writing of nanostructures deep inside Gallium Arsenide (GaAs)
Date
2018
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Source Title
CLEO Pacific Rim Conference 2018
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Publisher
OSA
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Language
English
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1
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Abstract
Recently, we have showed a direct laser writing method that enables the first subsurface modifications and functional devices created deep inside silicon. Here, we extend the technique demonstrating the first controlled subsurface nanostructures in GaAs.