A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach
buir.contributor.author | Okyay, Ali Kemal | |
dc.citation.epage | 1913 | en_US |
dc.citation.issueNumber | 10 | en_US |
dc.citation.spage | 1905 | en_US |
dc.citation.volumeNumber | 9 | en_US |
dc.contributor.author | Ghobadi, Amir | en_US |
dc.contributor.author | Khan, Talha Masood | en_US |
dc.contributor.author | Celik, Ozan Onur | en_US |
dc.contributor.author | Biyikli, Necmi | en_US |
dc.contributor.author | Okyay, Ali Kemal | en_US |
dc.contributor.author | Topalli, Kagan | en_US |
dc.date.accessioned | 2018-04-12T11:09:47Z | |
dc.date.available | 2018-04-12T11:09:47Z | |
dc.date.issued | 2017 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description.abstract | In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky diode based on finite element method and lumped equivalent circuit parameter extraction. Afterward, we use the developed model to investigate the effect of design parameters of the Schottky diode on parasitic capacitive and resistive elements. Based on this model, device design has been improved by deep-trench formation in the substrate and using a closed-loop junction to reduce the amount of parasitic capacitance and spreading resistance, respectively. The results indicate that cut-off frequency can be improved from 4.1 to 14.1 THz. Finally, a scaled version of the diode is designed, fabricated, and well characterized to verify the validity of this modeling approach. | en_US |
dc.description.provenance | Made available in DSpace on 2018-04-12T11:09:47Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2017 | en |
dc.identifier.doi | 10.1017/S1759078717000940 | en_US |
dc.identifier.eissn | 1759-0795 | |
dc.identifier.issn | 1759-0787 | |
dc.identifier.uri | http://hdl.handle.net/11693/37312 | |
dc.language.iso | English | en_US |
dc.publisher | Cambridge University Press | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1017/S1759078717000940 | en_US |
dc.source.title | International Journal of Microwave and Wireless Technologies | en_US |
dc.subject | Electromagnetic modeling | en_US |
dc.subject | Schottky diode | en_US |
dc.subject | Terahertz | en_US |
dc.subject | Capacitance | en_US |
dc.subject | Computational electromagnetics | en_US |
dc.subject | Diodes | en_US |
dc.subject | Equivalent circuits | en_US |
dc.subject | Parameter extraction | en_US |
dc.subject | Schottky barrier diodes | en_US |
dc.subject | Electromagnetic modeling | en_US |
dc.subject | Lumped equivalent circuit | en_US |
dc.subject | Planar Schottky diodes | en_US |
dc.subject | Schottky diodes | en_US |
dc.subject | Systematic simulation | en_US |
dc.subject | Tera Hertz | en_US |
dc.subject | Terahertz applications | en_US |
dc.subject | Terahertz frequencies | en_US |
dc.subject | Finite element method | en_US |
dc.title | A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach | en_US |
dc.type | Article | en_US |
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