Infrared luminescence of annealed germanosilicate layers

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage126en_US
dc.citation.spage121en_US
dc.citation.volumeNumber147en_US
dc.contributor.authorTokay, M. S.en_US
dc.contributor.authorYasar, E.en_US
dc.contributor.authorAgan, S.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2015-07-28T12:02:19Z
dc.date.available2015-07-28T12:02:19Z
dc.date.issued2014-03en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractIn the light of growing importance of semiconductor nanocrystals for photonics, we report on the growth and characterization of annealed germanosilicate layers used for Ge nanocrystal formation. The films are grown using plasma enhanced chemical vapor deposition (PECVD) and post-annealed in nitrogen at temperatures between 600 and 1200 degrees C for as long as 2 h. Transmission electron microscopy (TEM), Raman scattering and photoluminescence spectroscopy (PL) has been used to characterize the samples both structurally and optically. Formation of Ge precipitates in the germanosilicate layers have been observed using Raman spectroscopy for a variety of PECVD growth parameters, annealing temperatures and times. Ge-Ge mode at similar to 300 cm(-1) is clearly observed at temperatures as low as 700 degrees C for annealing durations for 45 min. Raman results indicate that upon annealing for extended periods of time at temperatures above 900 degrees C; nanocrystals of few tens of nanometers in diameter inside the oxide matrix and precipitation and interdiffusion of Ge, forming SiGe alloy at the silicon and oxide interface take place. Low temperature PL spectroscopy has been used to observe luminescence from these samples in the vicinity of 1550 nm, an important wavelength for telecommunications. Observed luminescence quenches at 140 K. The photoluminescence data displays three peaks closely interrelated at approximately 1490,, 1530 and 1610 nm. PL spectra persist even after removing the oxide layer indicating that the origin of the infrared luminescent centers are not related to the Ge nanocrystals in the oxide layer. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:02:19Z (GMT). No. of bitstreams: 1 8189.pdf: 1611328 bytes, checksum: 57f6210a44278548fe4762c9d5dd5efa (MD5)en
dc.identifier.doi10.1016/j.jlumin.2013.10.060en_US
dc.identifier.issn0022-2313
dc.identifier.urihttp://hdl.handle.net/11693/12642
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.jlumin.2013.10.060en_US
dc.source.titleJournal of Luminescenceen_US
dc.subjectInfrared Luminescenceen_US
dc.subjectGermanosilicateen_US
dc.subjectPhotoluminescence Spectroscopyen_US
dc.subjectRaman Scatteringen_US
dc.subjectAnnealingen_US
dc.titleInfrared luminescence of annealed germanosilicate layersen_US
dc.typeArticleen_US

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