Fabrication and characterization of high-speed, high quantum efficiency, resonant cavity enhanced Schottky photodiodes

Simple item page
buir.advisorÖzbay, Ekmel
dc.contributor.authorAta, Erhan Polatkan
dc.date.accessioned2016-01-08T20:20:18Z
dc.date.available2016-01-08T20:20:18Z
dc.date.issued1998
dc.descriptionAnkara : The Department of Physics and the Institute of Engineering and Science of Bilkent Univ., 1998.en_US
dc.descriptionThesis (Ph.D.) -- Bilkent University, 1998.en_US
dc.descriptionIncludes bibliographical refences.en_US
dc.description.abstractRapidly developing “photonics” technology promises higher bcindwidths of communiccition than any other techniciue did ever. The increasing rate of communication not only alters science and technology, but brings a global cultural exchange, which seems to be one of the most important revolutions in the history. Photodetectors, as vital corniDonents of optoelectronics, cire still being developed to achieve satisfying performances for the increasing communication demcinds. We have designed and fabricated high-speed, high efficiency resonant Ccivity enhanced (RCE) Schottky photodiodes, suitable for 800-850 mil operation wavelengths. We have used two different GaAs/AlGaAs based epitaxial structures to achieve high performance. From one of these structures, we fabricated photodiodes with 50% quantum efficiency and 80 GHz 3-dB bandwidth. The other structure had a design suitable for préfabrication wavelength tuning and adjustable active layer thickness. On this structure, we achieved 20% quantum efficiency along with, world record for RGB photodiodes, over 110 (Hlz 3-dB estimated bandwidth. We investigated effects of active layer, top Au layer, and silicon nitride coating layer thicknesses on the RCE devices. Discrepancy between theory and experiments were also explained briefly. Methods for improving performances of photodiodes has been proposed ¿is possible future work. Possible appliccitions, which may make use of current knowhow on the subject, have also been mentioned.en_US
dc.description.provenanceMade available in DSpace on 2016-01-08T20:20:18Z (GMT). No. of bitstreams: 1 1.pdf: 78510 bytes, checksum: d85492f20c2362aa2bcf4aad49380397 (MD5)en
dc.description.statementofresponsibilityAta, Erhan Polatkanen_US
dc.format.extentx, 64 leavesen_US
dc.identifier.urihttp://hdl.handle.net/11693/18546
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectResomuit Ckivityen_US
dc.subjectResonant Cavity Enhcuicementen_US
dc.subjectPhotodiodeen_US
dc.subjectSchottky Contfxcten_US
dc.subjectSchottky Photodiodeen_US
dc.subjectQuantum Efficiencyen_US
dc.subjectHigh-Speeden_US
dc.subject.lccTK7871.89.S35 A83 1998en_US
dc.subject.lcshDiodes, Schottky-barrier.en_US
dc.titleFabrication and characterization of high-speed, high quantum efficiency, resonant cavity enhanced Schottky photodiodesen_US
dc.typeThesisen_US
thesis.degree.disciplinePhysics
thesis.degree.grantorBilkent University
thesis.degree.levelDoctoral
thesis.degree.namePh.D. (Doctor of Philosophy)

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
B042938.pdf
Size:
8.07 MB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Graduate School of Engineering and Science