Crystallization of Ge in SiO2 matrix by femtosecond laser processing
| buir.contributor.author | Aydınlı, Atilla | |
| dc.citation.epage | 011807-5 | en_US |
| dc.citation.issueNumber | 1 | en_US |
| dc.citation.spage | 11807-1 | en_US |
| dc.citation.volumeNumber | 30 | en_US |
| dc.contributor.author | Salihoglu, O. | en_US |
| dc.contributor.author | Kürüm, U. | en_US |
| dc.contributor.author | Yaglioglu, H. G. | en_US |
| dc.contributor.author | Elmali, A. | en_US |
| dc.contributor.author | Aydınlı, Atilla | en_US |
| dc.date.accessioned | 2015-07-28T12:05:00Z | |
| dc.date.available | 2015-07-28T12:05:00Z | |
| dc.date.issued | 2012-01-19 | en_US |
| dc.department | Department of Physics | en_US |
| dc.description.abstract | Germanium nanocrystals embedded in a siliconoxide matrix has been fabricated by single femtosecond laser pulse irradiation of germanium doped SiO2 thin films deposited with plasma enhanced chemical vapor deposition. SEM and AFM are used to analyze surface modification induced by laser irradiation. Crystallization of Ge in the oxide matrix is monitored with the optic phonon at 300 cm(-1) as a function of laser fluence. Both the position the linewidth of the phonon provides clear signature for crystallization of Ge. In PL experiments, strong luminescence around 600 nm has been observed. | en_US |
| dc.description.provenance | Made available in DSpace on 2015-07-28T12:05:00Z (GMT). No. of bitstreams: 1 10.1116-1.3677829.pdf: 1027037 bytes, checksum: 36deb151dac7f2986ccb0ed56c7947c9 (MD5) | en |
| dc.identifier.doi | 10.1116/1.3677829 | en_US |
| dc.identifier.issn | 1071-1023 | |
| dc.identifier.uri | http://hdl.handle.net/11693/13185 | |
| dc.language.iso | English | en_US |
| dc.publisher | American Vacuum Society | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1116/1.3677829 | en_US |
| dc.source.title | Journal of Vacuum Science and Technology B | en_US |
| dc.subject | Silicon Oxide-films | en_US |
| dc.subject | Germanium nanocrystals | en_US |
| dc.subject | Amorphous-silicon | en_US |
| dc.subject | Visible photoluminescence | en_US |
| dc.subject | Light-emission | en_US |
| dc.subject | Thin-films | en_US |
| dc.subject | Luminescence | en_US |
| dc.subject | Defects | en_US |
| dc.subject | Pulses | en_US |
| dc.subject | Charge | en_US |
| dc.title | Crystallization of Ge in SiO2 matrix by femtosecond laser processing | en_US |
| dc.type | Article | en_US |
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