On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage233en_US
dc.citation.issueNumber4en_US
dc.citation.spage226en_US
dc.citation.volumeNumber9en_US
dc.contributor.authorZhang Z.-H.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorJu, Z.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorJi Y.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorDikme, Y.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:00:16Z
dc.date.available2015-07-28T12:00:16Z
dc.date.issued2013en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractInGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices, increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation exhibit strong internal polarization fields and suffer from significantly reduced radiative recombination rates. A reduced polarization within the device can improve the optical matrix element, thereby enhancing the optical output power and efficiency. Here, we have demonstrated computationally that the step-doping in the quantum barriers is effective in reducing the polarization-induced fields and lowering the energy barrier for hole transport. Also, we have proven experimentally that such InGaN/GaN LEDs with Si step-doped quantum barriers indeed outperform LEDs with wholly Si-doped barriers and those without doped barriers in terms of output power and external quantum efficiency. The consistency of our numerical simulation and experimental results indicate the effects of Si step-doping in suppressing quantum-confined stark effect and enhancing the hole injection, and is promising in improving the InGaN/GaN LED performance.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:00:16Z (GMT). No. of bitstreams: 1 10.1109-JDT.2012.2204858.pdf: 1203849 bytes, checksum: 33d3e5fb031f3418b4a12ae589a74dc1 (MD5)en
dc.identifier.doi10.1109/JDT.2012.2204858en_US
dc.identifier.issn1551-319X
dc.identifier.urihttp://hdl.handle.net/11693/12152
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JDT.2012.2204858en_US
dc.source.titleJournal of Display Technologyen_US
dc.subjectInganen_US
dc.subjectGanen_US
dc.subjectLight-emitting Diode (led)en_US
dc.subjectQuantum-confined Stark Effect (qcse)en_US
dc.subjectSi-dopingen_US
dc.subjectEfficiency-droopen_US
dc.subjectMacroscopic Polarizationen_US
dc.subjectWellsen_US
dc.subjectStrainen_US
dc.subjectSien_US
dc.subjectHeterostructuresen_US
dc.titleOn the effect of step-doped quantum barriers in InGaN/GaN light emitting diodesen_US
dc.typeArticleen_US

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