Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage418en_US
dc.citation.spage411en_US
dc.citation.volumeNumber548en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorTuran, S.en_US
dc.contributor.authorGökden, S.en_US
dc.contributor.authorTeke, A.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T11:03:50Z
dc.date.available2016-02-08T11:03:50Z
dc.date.issued2013en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractCurrent-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostructure. In this model, two Schottky diodes are in series: one is a metal-semiconductor barrier layer (AIInN) Schottky diode and the other is an equivalent Schottky diode, which is due to the heterojunction between the AlN and GaN layer. Capacitance-voltage studies show the formation of a two-dimensional electron gas at the AlN/GaN interface in the SC and the first AlN/GaN interface from the substrate direction in the DC. In order to determine the current mechanisms for SC and DC heterostructures, we fit the analytical expressions given for the tunneling current to the experimental current-voltage data over a wide range of applied biases as well as at different temperatures. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. At both a low and medium forward-bias voltage values for Schottky contacts on AlInN/AlN/GaN/AlN/GaN DC and AlInN/AlN/GaN SC heterostructures, the data are consistent with electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-420 K.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:03:50Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013en
dc.identifier.doi10.1016/j.tsf.2013.09.026en_US
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/11693/26715
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.tsf.2013.09.026en_US
dc.source.titleThin Solid Filmsen_US
dc.subjectAlInN/AlN/GaN single channel heterostructuresen_US
dc.subjectAlInN/AlN/GaN/AlN/GaN double channel heterostructuresen_US
dc.subjectSchottky contacten_US
dc.subjectTunneling currenten_US
dc.subjectAnalytical expressionsen_US
dc.subjectCurrent-voltage dataen_US
dc.subjectDouble channelen_US
dc.subjectForward bias voltageen_US
dc.subjectSchottky contactsen_US
dc.subjectSingle channelsen_US
dc.subjectTemperature dependenceen_US
dc.subjectTunneling currenten_US
dc.subjectElectron gasen_US
dc.subjectElectron tunnelingen_US
dc.subjectInterfaces (materials)en_US
dc.subjectSchottky barrier diodesen_US
dc.subjectHeterojunctionsen_US
dc.titleCurrent-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructuresen_US
dc.typeArticleen_US

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