High-speed >90% quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 nm range

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage1074en_US
dc.citation.issueNumber8en_US
dc.citation.spage1072en_US
dc.citation.volumeNumber74en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorKimukin, İ.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorAytür, O.en_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorUlu, G.en_US
dc.contributor.authorÜnlü, M. S.en_US
dc.contributor.authorMirin, R. P.en_US
dc.contributor.authorBertness, K. A.en_US
dc.contributor.authorChristensen, D. H.en_US
dc.date.accessioned2016-02-08T10:40:12Z
dc.date.available2016-02-08T10:40:12Z
dc.date.issued1999-02-22en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p-i-n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90%. The maximum quantum efficiency was 92% at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:40:12Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1999en
dc.identifier.doi10.1063/1.123485en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/25164
dc.language.isoEnglishen_US
dc.publisherA I P Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.123485en_US
dc.source.titleApplied Physics Lettersen_US
dc.titleHigh-speed >90% quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 nm rangeen_US
dc.typeArticleen_US

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Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)