High-speed >90% quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 nm range
| buir.contributor.author | Özbay, Ekmel | |
| buir.contributor.author | Bıyıklı, Necmi | |
| buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
| dc.citation.epage | 1074 | en_US |
| dc.citation.issueNumber | 8 | en_US |
| dc.citation.spage | 1072 | en_US |
| dc.citation.volumeNumber | 74 | en_US |
| dc.contributor.author | Özbay, Ekmel | en_US |
| dc.contributor.author | Kimukin, İ. | en_US |
| dc.contributor.author | Bıyıklı, Necmi | en_US |
| dc.contributor.author | Aytür, O. | en_US |
| dc.contributor.author | Gökkavas, M. | en_US |
| dc.contributor.author | Ulu, G. | en_US |
| dc.contributor.author | Ünlü, M. S. | en_US |
| dc.contributor.author | Mirin, R. P. | en_US |
| dc.contributor.author | Bertness, K. A. | en_US |
| dc.contributor.author | Christensen, D. H. | en_US |
| dc.date.accessioned | 2016-02-08T10:40:12Z | |
| dc.date.available | 2016-02-08T10:40:12Z | |
| dc.date.issued | 1999-02-22 | en_US |
| dc.department | Department of Physics | en_US |
| dc.department | Department of Electrical and Electronics Engineering | en_US |
| dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
| dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
| dc.description.abstract | We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p-i-n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90%. The maximum quantum efficiency was 92% at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations. | en_US |
| dc.identifier.doi | 10.1063/1.123485 | en_US |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://hdl.handle.net/11693/25164 | |
| dc.language.iso | English | en_US |
| dc.publisher | A I P Publishing LLC | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.123485 | en_US |
| dc.source.title | Applied Physics Letters | en_US |
| dc.title | High-speed >90% quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 nm range | en_US |
| dc.type | Article | en_US |