Photoluminescence from a VCSEL structure a-SiNx:H microcavity

dc.citation.epage528en_US
dc.citation.spage527en_US
dc.contributor.authorSerpengüzel, A.en_US
dc.contributor.authorDarici, Y.en_US
dc.date.accessioned2016-02-08T10:42:30Z
dc.date.available2016-02-08T10:42:30Z
dc.date.issued1999en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractMicrocavity effects on the photoluminescence (PL) of porous Si has already been reported. Recently, we have observed visible and near infrared (IR) PL from hydrogenated amorphous Si nitride (a-SiNx:H) grown by low temperature PECVD. We have also reported the enhancement and inhibition of PL in an a-SiNx:H microcavity formed with metallic mirrors. The a-SiNx:H used in the microcavity was grown both with and without ammonia (NH/sub 3/). For the Si rich a-SiNx:H grown without NH/sub 3/, the PL is in the red-near IR. For the N rich a-SiNx:H grown with NH/sub 3/, the PL is in the blue-green. In this paper, we report on the bright and spectrally pure PL of a-SiNx:H in a VCSEL structure microcavity.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:42:30Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1999en
dc.identifier.doi10.1109/CLEO.1999.834546en_US
dc.identifier.isbn1-55752-570-6
dc.identifier.urihttp://hdl.handle.net/11693/25300
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://doi.org/10.1109/CLEO.1999.834546en_US
dc.source.titleConference on Lasers and Electro-Opticsen_US
dc.subjectAmorphous materialsen_US
dc.subjectMirrorsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSemiconductor lasersen_US
dc.subjectDistributed bragg reflectorsen_US
dc.subjectVertical cavity surface emitting lasers (VCSEL)en_US
dc.subjectOptical materialsen_US
dc.titlePhotoluminescence from a VCSEL structure a-SiNx:H microcavityen_US
dc.typeArticleen_US

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