Photoluminescence from a VCSEL structure a-SiNx:H microcavity

Date

1999

Authors

Serpengüzel, A.
Darici, Y.

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Abstract

Microcavity effects on the photoluminescence (PL) of porous Si has already been reported. Recently, we have observed visible and near infrared (IR) PL from hydrogenated amorphous Si nitride (a-SiNx:H) grown by low temperature PECVD. We have also reported the enhancement and inhibition of PL in an a-SiNx:H microcavity formed with metallic mirrors. The a-SiNx:H used in the microcavity was grown both with and without ammonia (NH/sub 3/). For the Si rich a-SiNx:H grown without NH/sub 3/, the PL is in the red-near IR. For the N rich a-SiNx:H grown with NH/sub 3/, the PL is in the blue-green. In this paper, we report on the bright and spectrally pure PL of a-SiNx:H in a VCSEL structure microcavity.

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Conference on Lasers and Electro-Optics

Publisher

IEEE

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Published Version (Please cite this version)

Language

English