Epitaxially-stacked high efficiency laser diodes near 905 nm

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buir.contributor.authorDemir, Abdullah
buir.contributor.orcidDemir, Abdullah|0000-0003-4678-0084
dc.citation.epage6en_US
dc.citation.issueNumber6en_US
dc.citation.spage1en_US
dc.citation.volumeNumber14en_US
dc.contributor.authorZhao, Yuliang
dc.contributor.authorYang, Guowen
dc.contributor.authorZhao, Yongming
dc.contributor.authorTang, Song
dc.contributor.authorLan, Yu
dc.contributor.authorLiu, Yuxian
dc.contributor.authorWang, Zhenfu
dc.contributor.authorDemir, Abdullah
dc.date.accessioned2023-02-28T06:23:08Z
dc.date.available2023-02-28T06:23:08Z
dc.date.issued2022-12-01
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe report on studying tunnel junctions and an optical cavity structure for developing epitaxially-stacked high-efficiency 905 nm high-power laser diodes. The GaAs tunnel junctions were explored via simulations and experiments to realize a high peak current density of 7.7 × 104 A/cm2 and a low specific resistance of 1.5 × 10-5 Ωcm2 with a high n-doping concentration of 6 × 1019 cm-3. Employing a low-loss epitaxial structure design, single-, double-, and triple-cavity structure laser diodes demonstrated power scaling by epitaxial stacking. Triple-cavity laser diodes have a low optical loss (0.42 cm-1) and generate a peak power of 83 W with a short cavity length of 750 μm at a limited current of 30 A. © 2009-2012 IEEE.en_US
dc.identifier.doi10.1109/JPHOT.2022.3211964en_US
dc.identifier.issn19430655
dc.identifier.urihttp://hdl.handle.net/11693/111867
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.isversionofhttps://dx.doi.org/10.1109/JPHOT.2022.3211964en_US
dc.source.titleIEEE Photonics Journalen_US
dc.subjectEpitaxial stackingen_US
dc.subjectHigh efficiencyen_US
dc.subjectLaser diodeen_US
dc.subjectLow optical lossen_US
dc.subjectN-doping concentrationen_US
dc.subjectPower scalingen_US
dc.subjectSpecific resistanceen_US
dc.subjectTunnel junctionen_US
dc.titleEpitaxially-stacked high efficiency laser diodes near 905 nmen_US
dc.typeArticleen_US

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