Double subband occupation of the two-dimensional electron gas in InxAl1-XN/AlN/GaN/AlN heterostructures with a low indium content (0.064 ≤ x ≤ 0.140) barrier

Date
2010-05-08
Advisor
Instructor
Source Title
Thin Solid Films
Print ISSN
0040-6090
Electronic ISSN
Publisher
Elsevier
Volume
518
Issue
19
Pages
5572 - 5575
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

We present a carrier transport study on low indium content (0.064 ≤ x ≤ 0.140) InxAl1 - xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field (0-1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a two-dimensional hole gas were extracted after implementing quantitative mobility spectrum analysis on the magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than the mobility of the second subband. This behavior is explained by way of interface related scattering mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear Schrödinger- Poisson equations.

Course
Other identifiers
Book Title
Keywords
Hall effect, Indium aluminum nitride, Metal organic chemical vapor deposition, Two dimensional electron gas, Metallorganic chemical vapor deposition
Citation
Published Version (Please cite this version)