45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage707en_US
dc.citation.issueNumber7en_US
dc.citation.spage705en_US
dc.citation.volumeNumber13en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorAytür, O.en_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorÜnlü, M. S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:35:08Z
dc.date.available2016-02-08T10:35:08Z
dc.date.issued2001en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractHigh-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:35:08Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2001en
dc.identifier.doi10.1109/68.930421en_US
dc.identifier.issn1041-1135
dc.identifier.urihttp://hdl.handle.net/11693/24841
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/68.930421en_US
dc.source.titleIEEE Photonics Technology Lettersen_US
dc.subjectBandwidth-efficiencyen_US
dc.subjectHigh-speeden_US
dc.subjectIndium-tin-oxideen_US
dc.subjectPhotodetect orsen_US
dc.subjectPhotodiodesen_US
dc.subjectResonant-cavity enhancementen_US
dc.subjectSchottky photodiodeen_US
dc.subjectAluminum gallium arsenideen_US
dc.subjectIndium tin oxideen_US
dc.subjectCavity resonatorsen_US
dc.subjectPhotodetectorsen_US
dc.subjectQuantum efficiencyen_US
dc.subjectResonanceen_US
dc.subjectScanning electron microscopyen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconducting indium compoundsen_US
dc.subjectPhotodiodesen_US
dc.title45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodesen_US
dc.typeArticleen_US

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