Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.issueNumber2en_US
dc.citation.volumeNumber33en_US
dc.contributor.authorKumar, M.en_US
dc.contributor.authorTekcan, B.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2016-02-08T09:58:27Z
dc.date.available2016-02-08T09:58:27Z
dc.date.issued2015en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThe authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO2 is significantly reduced by more than two orders of magnitude compared to those without HfO2 insertion. The photoresponsivity at 360 nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO2 on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time. © 2015 American Vacuum Society.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:58:27Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015en
dc.identifier.doi10.1116/1.4905735en_US
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/22314
dc.language.isoEnglishen_US
dc.publisherAVS Science and Technology Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.4905735en_US
dc.source.titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_US
dc.subjectAtomic layer depositionen_US
dc.subjectElectron injectionen_US
dc.subjectGallium nitrideen_US
dc.subjectMetalsen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotonsen_US
dc.subjectDevice performanceen_US
dc.subjectFast response timeen_US
dc.subjectGaN metal-semiconductor-metalen_US
dc.subjectOrders of magnitudeen_US
dc.subjectPerformance enhancementsen_US
dc.subjectPhotodetectors (PDs)en_US
dc.subjectPhotoresponsivityen_US
dc.subjectUltra-violet photodetectorsen_US
dc.subjectHafnium oxidesen_US
dc.titlePerformance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layeren_US
dc.typeArticleen_US

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