MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage422en_US
dc.citation.issueNumber2en_US
dc.citation.spage419en_US
dc.citation.volumeNumber289en_US
dc.contributor.authorYu, H.en_US
dc.contributor.authorUlker, E.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T11:57:55Z
dc.date.available2015-07-28T11:57:55Z
dc.date.issued2006-04-01en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe present a study on the high performance p-type AlxGa1-xN (x = 0.35) layers grown by low-pressure metalorganic chemical vapor deposition on AIN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the AlxGa1-xN (x = 0.35) alloy is investigated. From the Hall effect and I-V transmission line model measurements, a p-type resistivity of 3.5 Omega cm for AlxGa1-xN (x = 0.35) epilayers are achieved. To the best of our knowledge, this is the lowest resistivity ever measured for the uniform p-type AlGaN with Al fraction higher than 0.3. The Mg and impurities (O, C and H) of the atom concentration in the epi-layers are analyzed by means of SIMS depth profiles, which reveal the dependence of impurities incorporation on the III elements and growth temperature.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T11:57:55Z (GMT). No. of bitstreams: 1 10.1016-j.jcrysgro.2005.11.109.pdf: 221386 bytes, checksum: 802a37c1062f6d86cea84ac2edd3133e (MD5)en
dc.identifier.doi10.1016/j.jcrysgro.2005.11.109en_US
dc.identifier.eissn1873-5002
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/11693/11497
dc.language.isoEnglishen_US
dc.publisherElsevier BV * North-Hollanden_US
dc.relation.isversionofhttps://doi.org/10.1016/j.jcrysgro.2005.11.109en_US
dc.source.titleJournal of Crystal Growthen_US
dc.subjectA1. Dopingen_US
dc.subjectA3. Metalorganic chemical vapor depositionen_US
dc.subjectB1. Nitrideen_US
dc.subjectB2. Semiconducting aluminum compoundsen_US
dc.titleMOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35en_US
dc.typeArticleen_US

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Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)