Analyzing the AlGaN/AlN/GaN heterostructures for HEMT applications

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage334en_US
dc.citation.issueNumber3en_US
dc.citation.spage331en_US
dc.citation.volumeNumber13en_US
dc.contributor.authorK. Durukan, İ.en_US
dc.contributor.authorAkpınar, Ö.en_US
dc.contributor.authorAvar, C.en_US
dc.contributor.authorGultekin, A.en_US
dc.contributor.authorÖztürk, M. K.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2019-02-25T10:39:00Z
dc.date.available2019-02-25T10:39:00Z
dc.date.issued2018-03en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physics
dc.departmentInstitute of Materials Science and Nanotechnology(UNAM)
dc.departmentNanotechnology Research Center(NANOTAM)
dc.description.abstractIn the present work, we have reported two high-electron-mobility transistor structures (HEMTs) with different thick AlN buffer deposited on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). AlN buffer layer has a critical important for the device performance therefore its effect of hererostructures analyzed using mosaic model. AlGaN/AlN/GaN heterostructures were examined by X-ray diffraction (XRD) and Atomic-force microscope (AFM). In order to evaluate the mosaicity of GaN, AlGaN, AlN layers in the structures, mosaic model was also used. These layers of lateral and vertical crystal size, dislocations, tilt and stain are investigated with HR-XRD device by Vegard and William Hall (WH) semi-experimental methods. According to the XRD results; As the buffer layer thickness decreases, the FWHM values of symmetric (002) and asymmetric peaks (105) of epitaxial layers increase. The thicker buffer layer makes the structure more crystalized. According to the AFM results the lower thickness AlN buffer has more frequent pits and hillocks and has more rough. As a result, the 520 nm thick AlN buffer layer showed a better structural performance.en_US
dc.description.provenanceSubmitted by Taner Korkmaz (tanerkorkmaz@bilkent.edu.tr) on 2019-02-25T10:39:00Z No. of bitstreams: 1 Bilkent-research-paper.pdf: 222869 bytes, checksum: 842af2b9bd649e7f548593affdbafbb3 (MD5)en
dc.description.provenanceMade available in DSpace on 2019-02-25T10:39:00Z (GMT). No. of bitstreams: 1 Bilkent-research-paper.pdf: 222869 bytes, checksum: 842af2b9bd649e7f548593affdbafbb3 (MD5) Previous issue date: 2018-03en
dc.identifier.doi10.1166/jno.2018.2239en_US
dc.identifier.eissn1555-1318
dc.identifier.issn1555-130X
dc.identifier.urihttp://hdl.handle.net/11693/50606
dc.language.isoEnglishen_US
dc.publisherAmerican Scientific Publishersen_US
dc.relation.isversionofhttps://doi.org/10.1166/jno.2018.2239en_US
dc.source.titleJournal of Nanoelectronics and Optoelectronicsen_US
dc.subjectAFMen_US
dc.subjectALGAN/ALN/GANen_US
dc.subjectHETEROSTRUCTURESen_US
dc.subjectMOCVDen_US
dc.subjectXRDen_US
dc.titleAnalyzing the AlGaN/AlN/GaN heterostructures for HEMT applicationsen_US
dc.typeArticleen_US

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