Integrated AlGaN quadruple-band ultraviolet photodetectors
| buir.contributor.author | Özbay, Ekmel | |
| buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
| dc.citation.epage | 065004-5 | en_US |
| dc.citation.issueNumber | 6 | en_US |
| dc.citation.spage | 065004-1 | en_US |
| dc.citation.volumeNumber | 27 | en_US |
| dc.contributor.author | Gökkavas, M. | en_US |
| dc.contributor.author | Butun, S. | en_US |
| dc.contributor.author | Caban, P. | en_US |
| dc.contributor.author | Strupinski, W. | en_US |
| dc.contributor.author | Özbay, Ekmel | en_US |
| dc.date.accessioned | 2016-02-08T09:46:31Z | |
| dc.date.available | 2016-02-08T09:46:31Z | |
| dc.date.issued | 2012-04-27 | en_US |
| dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
| dc.department | Department of Electrical and Electronics Engineering | en_US |
| dc.department | Department of Physics | en_US |
| dc.description.abstract | Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers. | en_US |
| dc.description.provenance | Made available in DSpace on 2016-02-08T09:46:31Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2012 | en |
| dc.identifier.doi | 10.1088/0268-1242/27/6/065004 | en_US |
| dc.identifier.issn | 0268-1242 | |
| dc.identifier.uri | http://hdl.handle.net/11693/21450 | |
| dc.language.iso | English | en_US |
| dc.publisher | IOP Publishing | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1088/0268-1242/27/6/065004 | en_US |
| dc.source.title | Semiconductor Science and Technology | en_US |
| dc.subject | AlGaN | en_US |
| dc.subject | Back-illuminated | en_US |
| dc.subject | Monolithically integrated | en_US |
| dc.subject | Spectral responsivity | en_US |
| dc.subject | Thick epitaxial layers | en_US |
| dc.subject | Ultra-violet photodetectors | en_US |
| dc.subject | Epitaxial growth | en_US |
| dc.subject | Monolithic integrated circuits | en_US |
| dc.subject | Photodetectors | en_US |
| dc.title | Integrated AlGaN quadruple-band ultraviolet photodetectors | en_US |
| dc.type | Article | en_US |
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