Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage134en_US
dc.citation.spage132en_US
dc.contributor.authorHaider, Alien_US
dc.contributor.authorKizir, Sedaen_US
dc.contributor.authorDeminskyi, P.en_US
dc.contributor.authorTsymbalenko, Oleksandren_US
dc.contributor.authorLeghari, Shahid Alien_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorAlevli, M.en_US
dc.contributor.authorGungor, N.en_US
dc.coverage.spatialKiev, Ukraineen_US
dc.date.accessioned2018-04-12T11:49:56Z
dc.date.available2018-04-12T11:49:56Z
dc.date.issued2016en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 19-21 April 2016en_US
dc.description.abstractGaN thin films grown by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) at two different substrate temperatures (250 and 450 °C) are compared. Effect of two different Ga source materials named as trimethylgallium (TMG) and triethylgallium (TEG) on GaN growth and film quality is also investigated and reviewed. Films were characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometery, and grazing incidence X-ray diffraction. GaN film deposited by TMG revealed better structural, chemical, and optical properties in comparison with GaN film grown with TEG precursor. When compared on basis of different substrate temperature, GaN films grown at higher substrate temperature revealed better structural and optical properties.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T11:49:56Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016en
dc.identifier.doi10.1109/ELNANO.2016.7493030en_US
dc.identifier.isbn9781509014316
dc.identifier.urihttp://hdl.handle.net/11693/37746
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/ELNANO.2016.7493030en_US
dc.source.title2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)en_US
dc.subjectAtomic layer depositionen_US
dc.subjectGaNen_US
dc.subjectLow temperature growthen_US
dc.subjectAtomsen_US
dc.subjectCathodesen_US
dc.subjectDepositionen_US
dc.subjectElectrodesen_US
dc.subjectElectron sourcesen_US
dc.subjectFilm growthen_US
dc.subjectGallium alloysen_US
dc.subjectGallium nitrideen_US
dc.subjectNanotechnologyen_US
dc.subjectOptical propertiesen_US
dc.subjectPulsed laser depositionen_US
dc.subjectSubstratesen_US
dc.subjectTemperatureen_US
dc.subjectThin filmsen_US
dc.subjectX ray diffractionen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectDifferent substratesen_US
dc.subjectGrazing incidence x-ray diffractionen_US
dc.subjectHollow cathodesen_US
dc.subjectLow temperature growthen_US
dc.subjectStructural and optical propertiesen_US
dc.subjectSubstrate temperatureen_US
dc.subjectTriethyl galliumsen_US
dc.subjectTrimethylgalliumen_US
dc.subjectAtomic layer depositionen_US
dc.titleEffect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer depositionen_US
dc.typeConference Paperen_US

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