High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage158en_US
dc.citation.spage157en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, İbrahimen_US
dc.contributor.authorAytür, Orhanen_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorUlu, G.en_US
dc.contributor.authorMirin, R.en_US
dc.contributor.authorChristensen, D. H.en_US
dc.contributor.authorÜnlü, M. S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialOrlando, FL, USAen_US
dc.date.accessioned2016-02-08T11:58:48Zen_US
dc.date.available2016-02-08T11:58:48Zen_US
dc.date.issued1998en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 1-4 December 1998en_US
dc.descriptionConference Name: 11th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1998en_US
dc.description.abstractWidely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity Bragg mirrors made of quarter-wave Al0.20Ga0.80As/AlAs stacks. Photoresponse and photospectral measurements were carried out. The tuning of the resonance wavelength within the Bragg mirror's upper and lower edges was observed. Quantum efficiency greater than 90% was demonstrated.en_US
dc.identifier.doi10.1109/LEOS.1998.737779en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11693/27654
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://doi.org/10.1109/LEOS.1998.737779en_US
dc.source.titleProceedings of the 11th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1998en_US
dc.subjectCavity resonatorsen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectOhmic contactsen_US
dc.subjectOptical waveguidesen_US
dc.subjectPhotocurrentsen_US
dc.subjectPhotodetectorsen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconductor device manufactureen_US
dc.subjectSemiconductor device structuresen_US
dc.subjectSemiconductor device testingen_US
dc.subjectBragg mirrorsen_US
dc.subjectResonant cavity enhanced (RCE) photodiodesen_US
dc.subjectPhotodiodesen_US
dc.titleHigh-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodesen_US
dc.typeConference Paperen_US

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